硅电容器
硅电容器和薄膜电容器属于特种器件,其制造工艺、技术手段及材料均沿用了半导体器件生产的通用方法与材料。由此实现的极高精度与严格控制,使得这类电容器能够达到近乎理想的性能,并具备优异的参数稳定性;尽管其容值范围相对有限,且相较于与其直接竞争的陶瓷基电容器而言成本较高。
DIE, CAPACITOR, 400 PF +/-5%
CAPACITOR,49 PF +/-10%,DIE
CAPACITOR,3.0 PF +/-10%,DIE
CAP SILICON 100PF 20% 50V DIE
DIE, CAPACITOR, 28 PF +/-10%
CAPACITOR,350 PF +/-10%,DIE
DIE, CAPACITOR, 49PF +/-10%
CAPACITOR,15 PF +/-10%,DIE
CAPACITOR,DIE,99 PF +/-10%
CAPACITOR,29 PF +/-10%,DIE
DIE, CAPACITOR, 27 PF +/-10%
DIE, CAPACITOR, 500 PF +/-10%