硅电容器
硅电容器和薄膜电容器属于特种器件,其制造工艺、技术手段及材料均沿用了半导体器件生产的通用方法与材料。由此实现的极高精度与严格控制,使得这类电容器能够达到近乎理想的性能,并具备优异的参数稳定性;尽管其容值范围相对有限,且相较于与其直接竞争的陶瓷基电容器而言成本较高。
DIE, BINARY CAPACITOR, 3.7 PF +/
CAPACITOR,DIE,0.3 PF +/-10%
DIE, MOUNTING CAPACITOR, 47PF +/
DIE, BINARY CAPACITOR, 15PF +/-1
CAP SILICON 1.5PF 20% 100V DIE
CAPACITOR,2.5 PF +/-5%,DIE
CAP SILICON 47PF 20% 100V DIE
DIE, CAPACITOR, 5 PF +/-10%
CAPACITOR,0.6 PF +/-10%,DIE
DIE, CAPACITOR, 0.8 PF +/-5%
CAP SILICON 47PF 20% 50V SMD