硅电容器
硅电容器和薄膜电容器属于特种器件,其制造工艺、技术手段及材料均沿用了半导体器件生产的通用方法与材料。由此实现的极高精度与严格控制,使得这类电容器能够达到近乎理想的性能,并具备优异的参数稳定性;尽管其容值范围相对有限,且相较于与其直接竞争的陶瓷基电容器而言成本较高。
CAPACITOR,2 PF +/-10%,DIE
DIE, CAPACITOR, 2.5PF +/-10%
DIE, CAPACITOR, 200 PF+/-10%
CAPACITOR,SMT,50PF?10%,100V,MNS,
DIE, CAPACITOR, 0.7 PF +/-10%
CAPACITOR,840 PF +/-10%,DIE
DIE, CAPACITOR, 0.5PF +/-10%
DIE, CAPACITOR, 500PF +/-10%
CAPACITOR CHIP, BINARY 4 PAD CHI
DIE, BINARY CAPACITOR, 22.5 PF +
DIE, CAPACITOR, 0.7 PF +/-5%